Nonvolatile semiconductor memory device and method of manufactur

Details Nonvolatile semiconductor memory device and method of manufactur Nonvolatile semiconductor memory device and method of manufactur

1998-08-27

2000-12-05

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, H01L 2976, H01L 29788

Patent

active

061570613

ABSTRACT:
A nonvolatile semiconductor memory device includes a vertical memory cell. The memory cell is constituted by at least a channel portion, a drain and a source, first and second floating gates, and a control gate. The channel portion is vertically formed on a semiconductor substrate. The drain and the source are formed at upper and lower positions of the channel portion to form a channel in the channel portion. The first floating gate is formed on part of a side portion of the channel portion via a gate insulating film. The second floating gate is formed on the side portion of the channel portion in a region without the first floating gate. The control gate is formed outside the first and second floating gates via an insulating isolation film. A method of manufacturing the nonvolatile semiconductor memory device is also disclosed.

REFERENCES:
patent: 4774556 (1988-09-01), Fujii et al.
patent: 5258634 (1993-11-01), Yang
patent: 5338953 (1994-08-01), Wake
patent: 5350937 (1994-09-01), Yamazaki et al.

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