Nonvolatile semiconductor memory device and method of fabricatin

Details Nonvolatile semiconductor memory device and method of fabricatin Nonvolatile semiconductor memory device and method of fabricatin

1998-01-07

1999-11-30

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257319, 257506, 257509, H01L 2994

Patent

active

059947330

ABSTRACT:
Each nonvolatile transistor comprises a floating gate electrode, an ONO film and a control gate electrode. An upper surface of a silicon oxide film is positioned at a height between upper and lower surfaces of the floating gate electrode. The control gate electrode continuously extends on the floating gate electrode and the silicon oxide film in a prescribed arrangement direction.

REFERENCES:
patent: 4905062 (1990-02-01), Esquivel et al.
patent: 5859459 (1999-01-01), Ikeda
"A Variable-Size Shallow Trench Isolation (STI) Technology with Diffused Sidewall Doping for Submicron CMOS", B. Davari et al., IEDM, 1988, pp. 92-95.
"A Novel Side-Wall Transfer-Transistor Cell (SWATT CELL) for Multi-Level Nand EEPROMs", S. Aritome et al., IEEE, 1995, pp. 275-278.

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