Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2010-02-26
2011-12-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189110
Reexamination Certificate
active
08085577
ABSTRACT:
A nonvolatile semiconductor memory device comprises: a plurality of first lines; a plurality of second lines; a plurality of memory cells each disposed at each of crossing-points of the first lines and the second lines and each comprising a variable resistor and a bi-directional diode; and a voltage control circuit configured to control a voltage of selected one of the first lines, unselected ones of the first lines, selected one of the second lines, and unselected ones of the second lines, respectively. The variable resistor is configured to change its resistance value depending on a polarity of a voltage applied thereto. The voltage control circuit is configured to apply a voltage pulse to the selected one of the first lines and to connect a capacitor of a certain capacitance to one end of the selected one of the second lines.
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Ichihara Reika
Kanno Hiroshi
Murooka Ken-ichi
Tsukamoto Takayuki
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
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