Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Lebentritt, Michael (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257SE21682, C257SE27081, C257SE27103, C257SE29003
Reexamination Certificate
active
08008704
ABSTRACT:
To reduce capacitance between each adjacent two word lines in a semiconductor memory device, a first insulating film is formed, with a first gate insulating film thereunder, in an interstice between gates respectively of each adjacent two memory transistors, and in an interstice between a gate of a selective transistor and a gate of a memory transistor adjacent thereto. Additionally, a second insulating film is formed on the first insulating film, sides of the gate of each memory transistor, and a side, facing the memory transistor, of the gate of the selective transistor. A third insulating film is formed parallel to a semiconductor substrate so as to cover a metal silicide film, the first and second insulating films and fourth and fifth insulating films. A void part is provided in the interstice between each adjacent two gates of the memory transistors, and in the interstice between the gate of the selective transistor and the gate of the memory transistor adjacent thereto. A bottom and two sides of each void part are shielded by the second insulating film, and a top of each void part is shielded by the third insulating film.
REFERENCES:
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 6894341 (2005-05-01), Sugimae et al.
patent: 7045849 (2006-05-01), Chen et al.
patent: 7151684 (2006-12-01), Matsunaga et al.
patent: 7309891 (2007-12-01), Yaegashi et al.
patent: 7566926 (2009-07-01), Matsunaga
patent: 7682900 (2010-03-01), Kim et al.
patent: 7745884 (2010-06-01), Sato et al.
patent: 7772101 (2010-08-01), Chae et al.
patent: 2006/0258092 (2006-11-01), Sato
patent: 2007/0096202 (2007-05-01), Kang et al.
patent: 2010/0295113 (2010-11-01), Kang et al.
patent: 2006-302950 (2006-02-01), None
patent: 2008-21768 (2008-01-01), None
Kabushiki Kaisha Toshiba
Lebentritt Michael
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Nonvolatile semiconductor memory device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2759854