Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-01-15
2010-10-12
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S508000, C257S510000, C257SE29020, C257SE21546, C257SE21661, C438S296000, C438S435000
Reexamination Certificate
active
07812391
ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
REFERENCES:
patent: 2002/0197823 (2002-12-01), Yoo et al.
patent: 2006/0183296 (2006-08-01), Yoo et al.
patent: 2006/0214258 (2006-09-01), Kiyotoshi
patent: 2006-269789 (2006-10-01), None
Matsuo Kazuhiro
Suzuki Atsuhiro
Tanaka Masayuki
Jefferson Quovaunda
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Matthew
LandOfFree
Nonvolatile semiconductor memory device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4187485