Nonvolatile semiconductor memory device and method of...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S185280

Reexamination Certificate

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07489573

ABSTRACT:
A method of testing a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device is provided with a memory cell of a field effect transistor type. The method includes: (A) performing erasing of the memory cell by using FN (Fowler-Nordheim) method; (B) performing programming back of the memory cell by using FN method, after the (A) step.

REFERENCES:
patent: 6606273 (2003-08-01), Guo et al.
patent: 2003/0035322 (2003-02-01), Wong
patent: 2007/0230261 (2007-10-01), Haufe et al.
patent: 2002-25279 (2002-01-01), None

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