Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-05-31
2009-02-10
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S185280
Reexamination Certificate
active
07489573
ABSTRACT:
A method of testing a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device is provided with a memory cell of a field effect transistor type. The method includes: (A) performing erasing of the memory cell by using FN (Fowler-Nordheim) method; (B) performing programming back of the memory cell by using FN method, after the (A) step.
REFERENCES:
patent: 6606273 (2003-08-01), Guo et al.
patent: 2003/0035322 (2003-02-01), Wong
patent: 2007/0230261 (2007-10-01), Haufe et al.
patent: 2002-25279 (2002-01-01), None
Le Vu A
NEC Electronics Corporation
Young & Thompson
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