Nonvolatile semiconductor memory device and method of...

Details Nonvolatile semiconductor memory device and method of... Nonvolatile semiconductor memory device and method of...

2007-10-09

2007-10-09

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29304

Reexamination Certificate

active

11078313

ABSTRACT:
A nonvolatile semiconductor memory device includes a gate electrode portion composed of a floating gate electrode formed above a main surface of a semiconductor substrate of a first conductivity type via a tunnel insulating film, an inter-electrode insulating film formed on the floating gate electrode and formed of a stacked structure film of three or more layers formed of two or more types of high-dielectric material, and a control gate electrode formed above the floating gate electrode via the inter-electrode insulating film, and source and drain regions of a second conductivity type which are formed on the main surface of the substrate with the gate electrode portion being arranged between the source and drain regions.

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patent: 6914292 (2005-07-01), Specht et al.
patent: 7001814 (2006-02-01), Halliyal et al.
patent: 2003/0122182 (2003-07-01), Specht et al.
patent: 6-151830 (1994-05-01), None
patent: 3357861 (2002-10-01), None
patent: 2002-539637 (2002-11-01), None
patent: 2003-0065702 (2003-08-01), None

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