Nonvolatile semiconductor memory device and method of...

Details Nonvolatile semiconductor memory device and method of... Nonvolatile semiconductor memory device and method of...

2007-04-24

2007-04-24

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S330000, C257SE29260, C438S259000

Reexamination Certificate

active

11137652

ABSTRACT:
A nonvolatile semiconductor memory device whose gate structure of a transistor other than a memory cell transistor has a same stacked gate structure as the memory cell transistor, the gate structure comprising a semiconductor substrate, a first insulation film provided on the semiconductor substrate, a first conductive film provided on the first insulation film, a second insulation film, provided on the first conductive film, having an opening, a spacer provided on the second insulation film to define the opening, and a second conductive film provided on the spacer and electrically connected to the first conductive film via the opening.

REFERENCES:
patent: 2004/0000688 (2004-01-01), Harari et al.
patent: 2002-176114 (2002-06-01), None

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