Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1996-12-10
1998-08-18
Zarabian, A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, G11C 1122
Patent
active
057966486
ABSTRACT:
A nonvolatile semiconductor memory device has a ferroelectric cell and a paraelectric cell. The ferroelectric cell includes a first thin-film capacitor which has a first lower electrode formed on a substrate, a first dielectric film grown on the first lower electrode and a first upper electrode formed on the first dielectric film, and a first switching transistor connected to the first thin-film capacitor. The paraelectric cell includes a second thin-film capacitor which has a second lower electrode, a second dielectric film grown on the second lower electrode and a second upper electrode formed on the second dielectric film, and a second switching transistor connected to the second thin-film capacitor. The first lower electrode is provided such that the first dielectric film has ferroelectricities, while the second lower electrode is provided such that the second dielectric film has paraelectricities.
REFERENCES:
patent: 5155573 (1992-10-01), Abe
patent: 5250827 (1993-10-01), Inoue
patent: 5469324 (1995-11-01), Henderson
patent: 5514484 (1996-05-01), Nashimoto
patent: 5615145 (1997-03-01), Takeuchi
Abe Kazuhide
Kawakubo Takashi
Kabushiki Kaisha Toshiba
Zarabian A.
LandOfFree
Nonvolatile semiconductor memory device and method for manufactu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and method for manufactu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method for manufactu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1121425