Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-16
2000-04-18
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, 257322, 257330, 257335, 257336, 438259, 438267, 438276, 438302, H01L 2972
Patent
active
06051860&
ABSTRACT:
In a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together, a channel region has a triple structure. Thus, a high electric field is formed in a corner portion between the step side region and the second surface region and in the vicinity thereof. A high electric field is also formed in the first surface region. As a result, the efficiency, with which electrons are injected into a floating gate, is considerably increased.
REFERENCES:
patent: 5721442 (1998-02-01), Hong
patent: 5780341 (1998-07-01), Ogura
S. Samachisa, et al., "A 128k Flash EEPROM Using Double-Polysilicon Technology", IEEE Journal of Solid-State Circuits, vol. SC-22, No. 5, pp. 676-683, Oct. 1987.
S. Kianian, et al., A Novel 3 Volts-Only, Small Sector Erase, High Density Flash E.sup.3 PROM, IEEE 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 71-72, 1994.
Akamatsu Kaori
Hori Atsushi
Kato Jun-ichi
Odanaka Shinji
Ogura Seiki
Halo. LSI Design and Device Technologies, Inc.
Matsushita Electric - Industrial Co., Ltd.
Wojciechowicz Edward
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