Nonvolatile semiconductor memory device and method for driving t

Details Nonvolatile semiconductor memory device and method for driving t Nonvolatile semiconductor memory device and method for driving t

1994-10-14

1996-05-14

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 1122

Patent

active

055174469

ABSTRACT:
The nonvolatile semiconductor memory device of the invention includes: bit-line pairs; word lines; memory cells each including a capacitor having a ferroelectric film between electrodes thereof, and a switching element connected to one of the word lines, one of the electrodes of the capacitor being connected to one bit line of the bit-line pairs via the switching element, the other electrode of the capacitor being connected to a common cell plate; sense amplifiers each connected to one of the bit-line pairs; a row decoder for selecting one of the word lines corresponding to an input row address; and a column decoder for selecting at least one of the bit-line pairs corresponding to an input column address. The device further includes: a first driving circuit for precharging the bit lines to a first potential; and a second driving circuit for precharging again the bit-line pair selected by the column decoder to a second potential which is different from the first potential. In the memory device, a potential difference between the first potential and a potential of the common cell plate is smaller than a potential difference which causes polarization inversion in the ferroelectric film, and a potential difference between the second potential and the potential of the common cell plate is equal to or larger than the potential which causes potential inversion in the ferroelectric film.

REFERENCES:
patent: 5297077 (1994-03-01), Imai et al.
patent: 5392234 (1995-02-01), Hirano et al.
patent: 5406510 (1995-04-01), Mihara et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device and method for driving t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device and method for driving t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and method for driving t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1901726