Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2011-03-08

2011-03-08

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S411000, C257SE29129, C257SE29132, C257SE29162

Reexamination Certificate

active

07902588

ABSTRACT:
A nonvolatile semiconductor memory device includes: a tunneling insulating film; a floating gate electrode; an inter-electrode insulating film, in which an interface facing the floating gate electrode and an interface facing a control gate electrode are defined as the first interface and the second interface, respectively; and a control gate electrode. The inter-electrode insulating film includes one or more first elements selected from rare earth elements, one or more second elements selected from Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first element, which is defined as the number of atoms of the first element divided by that of the second element, is changed between the first interface and the second interface, and the composition ratio in the vicinity of the first interface is lower than that in the vicinity of the second interface.

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L. Yan et al., “The effect of ultra-thin Al2O3layers on the dielectric properties of LaAlO3thin film on silicon”, Semicond. Sci. Technol., 19, Jun. 8, 2004, pp. 935-938.

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