Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2009-03-20

2011-12-06

Li, Meiya (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S301000, C257S302000, C257S303000, C257S330000, C257S405000, C257S406000, C257SE29170, C257SE29257, C257SE29309, C257SE27071, C257SE21210, C257SE21679, C438S243000, C438S259000, C438S261000, C438S270000, C438S386000, C438S589000, C438S591000

Reexamination Certificate

active

08072024

ABSTRACT:
A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the stacking direction. A semiconductor pillar is formed inside the through hole. A charge storage layer is provided at least between the semiconductor pillar and the electrode film. At least part of a side surface of a portion of the through hole located in the electrode film is sloped relative to the stacking direction.

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patent: 2007-266143 (2007-10-01), None
U.S. Appl. No. 12/886,132, filed Sep. 20, 2010, Yahashi, et al.
U.S. Appl. No. 12/966,458, filed Dec. 13, 2010, Sakurai, et al.

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