Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-27
2011-10-11
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S244000, C257S314000, C257S261000, C257SE21209, C257SE29129, C257SE29300
Reexamination Certificate
active
08035150
ABSTRACT:
A memory cell array of a NOR type flash memory is constructed by arranging memory cell transistors in a matrix, each of the memory cell transistors includes a contact connecting a semiconductor substrate to an overlayer wire. Columns of the memory cell transistors are isolated from one another by shallow trench isolations. The height of top surface of a filling oxide film in the shallow trench isolation which is adjacent to each drain contact is equal to that of top surface of the drain region. The top surface of a filling oxide film in the shallow trench isolation which is adjacent to each channel region is higher than a top surface of the semiconductor substrate in the channel region.
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Office Action issued Nov. 30, 2010, in Japanese Patent Application No. 2005-342289 (with English-language Translation).
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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