Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-19
2010-02-02
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07655971
ABSTRACT:
A nonvolatile semiconductor memory device includes: a source region and a drain region formed at a distance from each other in a semiconductor substrate; a tunnel insulating film formed on the semiconductor substrate between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a first alumina layer formed on the charge storage film, and having a first impurity element added thereto, the first impurity element having an octacoordinate ion radius of 63 pm or greater, the first impurity element having a concentration distribution in a layer thickness direction of the first alumina layer that becomes the largest in a region close to the side of the charge storage film; a second alumina layer formed on the first alumina layer, and not having the first impurity element added thereto; and a control gate electrode formed on the second alumina layer.
REFERENCES:
patent: 5596214 (1997-01-01), Endo
patent: 7279740 (2007-10-01), Bhattacharyya et al.
patent: 7595240 (2009-09-01), Lee et al.
patent: 2004/0191988 (2004-09-01), Sandhu et al.
patent: 2004/0251489 (2004-12-01), Jeon et al.
patent: 2005/0006696 (2005-01-01), Noguchi et al.
patent: 2005/0023603 (2005-02-01), Eldridge et al.
patent: 55032276 (1980-03-01), None
patent: 2004-363329 (2004-12-01), None
patent: 2005-243183 (2005-09-01), None
patent: 2005-311379 (2005-11-01), None
patent: 2006-203200 (2006-08-01), None
patent: 10-20040108309 (2004-12-01), None
U.S. Appl. No. 12/353,586, filed Jan. 14, 2009, Kikuchi, et al.
U.S. Appl. No. 12/193,251, filed Aug. 18, 2008, Ino.
U.S. Appl. No. 12/212,128, filed Sep. 17, 2008, Nakasaki, et al.
Ino Tsunehiro
Muraoka Kouichi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Wilson Allan R.
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