Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-09
2010-11-30
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S320000, C257SE27084, C257SE21646, C438S258000, C438S259000, C438S593000
Reexamination Certificate
active
07842998
ABSTRACT:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device including: a semiconductor substrate; memory cell transistors that are series-connected; and a select transistor that includes: a first diffusion region that is formed in the semiconductor substrate at one end of the memory cell transistors; a first insulating film that is formed on the semiconductor substrate at a side of the first diffusion region; a select gate electrode that is formed on the first insulating film; a semiconductor pillar that is formed to extend upward from the semiconductor substrate and to be separated from the select gate electrode; a second insulating film that is formed between the select gate electrode and the semiconductor pillar; and a second diffusion region that is formed on the semiconductor pillar.
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Aoki Nobutoshi
Izumida Takashi
Kanemura Takahisa
Kabushiki Kaisha Toshiba
Ligai Maria
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pham Thanh V
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