Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2007-04-03

2007-04-03

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257S390000, C257S401000

Reexamination Certificate

active

11076063

ABSTRACT:
The nonvolatile semiconductor memory device comprises a channel region formed in a semiconductor substrate, a gate electrode formed over the channel region with a charge retaining insulating film interposed therebetween, a first pair of source/drain regions arranged in a first direction with the channel region formed therebetween, and a second pair of source/drain regions arranged in a second direction intersecting the first direction with the channel region formed therebetween. The channel region and the gate electrode are common between a first memory cell transistor including the first pair of source/drain regions and a second memory cell transistor including the second pair of source/drain regions.

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Ilan Bloom et al., “NROM™ NVM technology for Multi-Media Applications”, 2003, NVSMW.

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