Nonvolatile semiconductor memory device and method for...

Details Nonvolatile semiconductor memory device and method for... Nonvolatile semiconductor memory device and method for...

2006-01-03

2006-01-03

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S321000, C257S336000, C257S334000, C257S345000, C438S201000, C438S211000, C438S257000

Reexamination Certificate

active

06982456

ABSTRACT:
A nonvolatile semiconductor memory device according to the present invention has a control gate electrode which is formed on the upper stage of a stepped portion formed in the principal surface of a substrate with a first insulating film interposed therebetween and a floating gate electrode which is formed to cover up the stepped portion, capacitively coupled to the side surface of the control gate electrode closer to the stepped portion with a second insulating film interposed therebetween, and opposed to the lower stage of the stepped portion with a third insulating film serving as a tunnel film interposed therebetween. Within the semiconductor substrate and in the vicinity of the stepped portion, there is formed a depletion control layer which is composed of a heavily doped impurity region and formed to extend from a position located under the floating gate electrode and at a distance from the upper corner of the stepped portion toward the lower corner of the stepped portion and adjoin the end portion of a drain region without reaching a step side region.

REFERENCES:
patent: 5712180 (1998-01-01), Guterman et al.
patent: 5780341 (1998-07-01), Ogura
patent: 6051860 (2000-04-01), Odanaka et al.
patent: 6272050 (2001-08-01), Cunningham et al.
patent: 6445617 (2002-09-01), Sakakibara
patent: 6538275 (2003-03-01), Sugiyama et al.

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