Nonvolatile semiconductor memory device and manufacturing method

Details Nonvolatile semiconductor memory device and manufacturing method Nonvolatile semiconductor memory device and manufacturing method

1989-09-25

1991-08-20

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 365185, H01L 2968

Patent

active

050418866

ABSTRACT:
A nonvolatile semiconductor memory device is provided including a doped semiconductor substrate and three gate conductor layers electrically insulated from each other in the cell area on the substrate. A first floating gate conductor layer is formed on the substrate and covered by a second control gate conductor layer, forming a twofold polycrystalline silicon structure. A third select gate conductor layer is formed along one side wall of the twofold structure of the floating gate and control gate conductor layers, having a side wall spacer structure. The first conductor layer serves as a floating gate; the second conductor layer serves as a control gate; and the third conductor layer serves as a select gate. A field oxide layer is provided to separate cells from each other. The control and the select gates are connected in a region between cells through the field oxide layer. By providing the third conductor in the form of a side wall spacer, the cell area can be greatly reduced.

REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
Larsen et al., "Floating-Gate Device with Dual Control Gates," IBM Technical Disclosure Bulletin, vol. 21, No. 8, Jan. 1979, p. 3368.

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