Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-05
1999-10-26
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257900, H01L 29788
Patent
active
059733551
ABSTRACT:
There is disclosed a nonvolatile semiconductor memory device, which is capable of maintaining a high capacitance ratio even when a memory cell is formed in a micronized size without increasing the number of manufacturing steps. In a flash memory having buried diffusion layer type cells, a source region and drain regions and are formed in self alignment with a polycrystalline film pattern which has a polycrystalline silicon film having projecting and recessing parts in its upper surface.
REFERENCES:
patent: 5650648 (1997-07-01), Kapoor
Honma Ichiro
Kubota Taishi
Okazawa Takeshi
Ono Haruhiko
Shirai Hiroki
NEC Corporation
Prenty Mark V.
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