Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-06-07
2011-06-07
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S798000, C257SE21471
Reexamination Certificate
active
07955995
ABSTRACT:
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011cm−3or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.
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Asami Yoshinobu
Kakehata Tetsuya
Tanaka Tetsuhiro
Costellia Jeffrey L.
Louie Wai-Sing
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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