Nonvolatile semiconductor memory device and manufacturing...

Details Nonvolatile semiconductor memory device and manufacturing... Nonvolatile semiconductor memory device and manufacturing...

2009-09-01

2011-11-08

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE21409, C257SE29309, C438S261000

Reexamination Certificate

active

08053828

ABSTRACT:
First and second memory cells have first and second channels, first and second tunnel insulating films, first and second charge storage layers formed of an insulating film, first and second block insulating films, and first and second gate electrodes. A first select transistor has a third channel, a first gate insulating film, and a first gate electrode. The first channel includes a first-conductivity-type region and a second-conductivity-type region which is formed on at least a part of the first-conductivity-type region and whose conductivity type is opposite to the first conductivity type. The third channel includes the first-conductivity-type region and the second-conductivity-type region formed on the first-conductivity-type region. The number of data stored in the first memory cell is smaller than that of data stored in the second memory cell.

REFERENCES:
patent: 6835987 (2004-12-01), Yaegashi
patent: 6949794 (2005-09-01), Yaegashi
patent: 7122869 (2006-10-01), Yaegashi
patent: 7274075 (2007-09-01), Yaegashi
patent: 2005/0104120 (2005-05-01), Ichige et al.
patent: 2008/0012080 (2008-01-01), Yaegashi
patent: 2009/0238002 (2009-09-01), Wong et al.
patent: 2001-284554 (2001-10-01), None
patent: 2005-286168 (2005-10-01), None
patent: 2008-147664 (2008-06-01), None
Jae-Duk Lee, et al., “A New Programming Disturbance Phenomenon in NAND Flash Memory by Source/Drain Hot-Electrons Generated by GIDL Current”, 2006 IEEE, pp. 31-33.
U.S. Appl. No. 12/881,730, filed Sep. 14, 2010, Yaegashi.

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