Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-30
2009-08-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000, C257S332000, C257SE27118, C257SE29262
Reexamination Certificate
active
07569879
ABSTRACT:
A nonvolatile semiconductor memory device includes a semiconductor substrate, plural semiconductor columns arranged in a matrix form on the substrate, plural first conductive areas zonally formed in a column direction on the substrate between the semiconductor columns and functioning as word lines, plural second conductive areas formed at tops of the semiconductor columns, respectively, plural bit lines connecting the second conductive areas in a row direction, plural channel areas respectively formed in the semiconductor columns between the first and second conductive areas and contacting the first and second conductive areas, plural third conductive areas continuously formed via first insulating films above the substrate and opposite to the channel areas in the column direction between the semiconductor columns and functioning as control gates, and plural charge accumulation areas respectively formed via second insulating films at upper portions of the channel areas at a position higher than the third conductive areas.
REFERENCES:
patent: 5006909 (1991-04-01), Kosa
patent: 6077745 (2000-06-01), Burns et al.
patent: 6756633 (2004-06-01), Wang et al.
patent: 2006/0046391 (2006-03-01), Tang et al.
patent: 4-79369 (1992-03-01), None
Chinese Patent Office Notification of the First Office Action issued in copending Application No. 200710007976.1 mailed May 16, 2008, and English language translation thereof.
Kinoshita Atsuhiro
Koga Junji
Murooka Ken-ichi
Shirota Riichiro
Watanabe Hiroshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Ngo Ngan
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