Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-09
2005-08-09
Guerrero, Maria F. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S324000, C257S325000, C438S257000
Reexamination Certificate
active
06927446
ABSTRACT:
A first diffused layer and a second diffused layer are formed on the major surface of a silicon substrate. A first insulating layer, a second insulating layer or a semiconductor layer, and a third insulating layer are laminated on the major surface of the silicon substrate in the vicinity of the first diffused layer or the second diffused layer and are partially formed. A fourth insulating layer is formed as a gate insulating film. A fifth insulating layer is formed on the side walls of the second insulating layer or the semiconductor layer. In a region of most of a channel, the gate insulating film is formed and a gate electrode is formed so that it covers the gate insulating film and the laminated films. According to this structure, the operating voltage of a flash memory is reduced, the operation is easily sped up and the holding characteristic of information charge can be enhanced.
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Guerrero Maria F.
McGinn & Gibb PLLC
NEC Electronics Corporation
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