Nonvolatile semiconductor memory device and data erase/write...

Details Nonvolatile semiconductor memory device and data erase/write... Nonvolatile semiconductor memory device and data erase/write...

2008-03-27

2010-06-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07742331

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell array which includes a memory cell string including a plurality of memory cells each having a variable resistor element and a switching element having a current path with one end and the other end, between which the variable resistor element is connected, the plurality of memory cells having current paths thereof being connected in series, the memory cell array further including a first select element connected to one end of a current path of the memory cell string, and a second select element connected to the other end of the current path of the memory cell string, a bit line which is electrically connected to one end of a current path of the first select element, and a source line which is electrically connected to one end of a current path of the second select element.

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S. Q. Liu, et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.

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