Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-02-07
2006-02-07
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S189011, C365S218000
Reexamination Certificate
active
06995999
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory array in which a plurality of memory cells are arranged in a row direction and a column direction, each of the memory cells being formed by connecting one end of a variable resistive element for storing information according to a change in electric resistance caused by an electric stress and a drain of a selection transistor to each other on a semiconductor substrate, a voltage switch circuit for switching among a program voltage, an erase voltage and a read voltage to be applied to the source line and the bit line connected to the memory cell, and a pulse voltage applying circuit. In the state where the program voltage or erase voltage corresponding to the bit line and the source line is applied to the bit line and the source line connected to a memory cell to be programmed or erased in the memory array via the voltage switch circuit, the pulse voltage applying circuit applies a voltage pulse for programming or erasing to the word line connected to the gate electrode of the selection transistor connected to the memory cell.
REFERENCES:
patent: 2003/0086285 (2003-05-01), Yamaguchi
patent: 2003/0161182 (2003-08-01), Li et al.
patent: 2004/0114429 (2004-06-01), Ehiro et al.
patent: 1 426 972 (2004-06-01), None
Hsu, S. T. et al. (2003). “Charge Transport Property In Non-Volatile Resistor Random Access Memory (RRAM),” Non-Volatile Semiconductor Memory Workshop, pp. 97-98.
Zhuang, W. W. et al. (2002). “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),” IEDM, Paper No. 7.5IEEE, 4 pages.
European Search Report mailed Jul. 12, 2005 for European Patent Application No. 04253457.8, 3 pages.
Le Thong Q.
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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