Nonvolatile semiconductor memory device and a method of the...

Details Nonvolatile semiconductor memory device and a method of the... Nonvolatile semiconductor memory device and a method of the...

2006-10-24

2006-10-24

Tran, Long (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE21680, C257SE21179

Reexamination Certificate

active

07126184

ABSTRACT:
A reduction in size nonvolatile semiconductors for use in a memory device and an increase in the capacity thereof are promoted. Each memory cell of a flash memory is provided with a field effect transistor having a first gate insulator film formed on a p-type well, a selector gate which is formed on the first insulator film and has side faces and a top face covered with a silicon oxide film (first insular film), floating gates which are formed in a side-wall form on both sides of the selector gate and which are electrically isolated from the selector gate through the silicon oxide film, a second gate insulator film formed to cover the silicon oxide film and the surface of each of the floating gates, and a control gate formed over the second gate insulator film.

REFERENCES:
patent: 2005/0127429 (2005-06-01), Otsuga et al.
patent: 2694618 (1997-09-01), None
patent: 2001-156275 (2001-06-01), None
patent: 2002-373948 (2002-12-01), None

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