Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-21
1998-08-18
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257321, H01L 29788
Patent
active
057961409
ABSTRACT:
A nonvolatile semiconductor memory device including a plurality of memory cells, and a method of making this memory device. The nonvolatile semiconductor memory device includes: a semiconductor substrate; an element-isolation structure formed in a surface of the semiconductor substrate and having at least two linear portions extending in a longitudinal direction to define at least one element region between them; and at least one of the memory cells formed in the element region and including: a pair of impurity diffusion layers formed in the surface of said semiconductor substrate along each of the linear portions and a floating gate of a conductive material formed in the element region so as to extend in a lateral direction crossing the longitudinal direction and to bridge the two linear portions, the floating gate including at least a first portion formed on the surface of the semiconductor substrate through a tunnel oxide film and a second portion formed on the surface of the semiconductor substrate through a gate oxide film so as to cover the first portion, the tunnel oxide film having a thickness smaller than that of the gate oxide film, wherein the first portion overlaps through the tunnel oxide film with one of the impurity diffusion layers at an overlapping area extending in the longitudinal direction and having a width equal to or less than 0.18 .mu.m measured in the lateral direction.
REFERENCES:
patent: 4892840 (1990-01-01), Esquivel et al.
patent: 5394002 (1995-02-01), Peterson
patent: 5455790 (1995-10-01), Hart et al.
patent: 5469383 (1995-11-01), McElroy et al.
patent: 5471423 (1995-11-01), Iwasa
patent: 5545907 (1996-08-01), Maari
patent: 5569946 (1996-10-01), Hong
patent: 5585656 (1996-12-01), Hsue et al.
Yoshiaki et al., A High Capacitive-Coupling Ratio (HiCR) Cell for 3V-Only 64 Mbit and Future Flash Memories, 1993 IEDM Technical Digest, pp. 19-22.
Cao Phat X.
Crane Sara W.
Nippon Steel Corporation
LandOfFree
Nonvolatile semiconductor memory device and a method of making t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device and a method of making t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device and a method of making t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116944