Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-11-30

1996-10-22

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518501, 36518514, 36518505, 36518511, G11C 1134

Patent

active

055684203

ABSTRACT:
The present invention provides an electrically erasable and programmable nonvolatile semiconductor memory device (EEPROM) with NAND structured cells which is capable of reducing the number of peripheral circuits required to drive each memory block. The EEPROM according to the present invention includes memory blocks having transfer transistors controlled by a memory block selection signal, wherein the transfer transistors serve as a path through which control gate driving signals are supplied, and wherein control gate driving signals are applied to word lines at full voltage due to a self-boosting operation of each transfer transistor.

REFERENCES:
patent: 5197027 (1993-03-01), Challa
patent: 5295096 (1994-03-01), Nakajima

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