Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1990-10-31

1992-12-29

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

365185, 365 63, 365 51, G11C 506, G11C 700, G11C 11405, G11C 11407

Patent

active

051757044

ABSTRACT:
In a nonvolatile semiconductor memory device, a wiring layer is connected between a power source and a memory cell. Resistance of the wiring layer is larger than the on-resistance of a load transistor, so that the load transistor substantially determines the load characteristic. Therefore, the load characteristic curve is more gentle in inclination and more rectilinear in shape. This makes the data writing operation stable against a variance in the channel lengths of manufactured transistors forming the memory cells.

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patent: 4542485 (1985-09-01), Iwahashi et al.
patent: 4709352 (1987-11-01), Kitazawa
patent: 4802121 (1989-01-01), Schreck
patent: 4888735 (1989-12-01), Lee et al.
patent: 4899308 (1990-02-01), Khan
patent: 4954991 (1990-09-01), Saeki et al.

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