Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-04-14
2000-06-27
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, G11C 1606
Patent
active
060814535
ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell having a drain electrically connected to a bit line, a source, a floating gate, and a control gate electrically connected to a word line, a sense amplifier for comparing a plurality of predetermined reference voltages with the bit line voltage to detect data stored in the memory cell and outputting one of first, second, and third outputs, and a logic circuit for determining stored data of two bits on the basis of the logic calculation of the first, second, and third outputs. It is determined whether desired data has been written, based on data read out in a verify-read operation after a write operation, at a time later than that for outputting readout data in a read operation. With this arrangement, the difference in read rate between selected memory cells can be minimized.
REFERENCES:
patent: 5068827 (1991-11-01), Yamada et al.
patent: 5424978 (1995-06-01), Wada et al.
patent: 5523972 (1996-06-01), Rashid et al.
patent: 5708605 (1998-01-01), Sato
patent: 5818759 (1998-10-01), Kobayashi
patent: 5923585 (1999-07-01), Wong et al.
patent: 5949709 (1999-09-01), Birnie
Dinh Son T.
Kabushiki Kaisha Toshiba
LandOfFree
Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1789663