Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1989-08-14

1990-03-27

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 59, 365185, H01L 2978

Patent

active

049125346

ABSTRACT:
A second impurity diffusion layer is formed in a semiconductor substrate at a fixed distance from a first diffusion layer in the substrate. The diffusion layer is supplied with a program potential. An electrode is placed on the channel region between the first and second diffusion layers. Non-selected memory cells are prevented from becoming half-selected by electrically separating the first diffusion layer from the program potential according to signals from the electrode, resulting in substantial improvements in the reliability of the semiconductor device.

REFERENCES:
patent: 4486769 (1984-12-01), Simko
patent: 4713677 (1987-12-01), Tigelaar

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