Nonvolatile semiconductor memory device

Static information storage and retrieval – Read/write circuit – Signals

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Details

365185, 365218, G11C 1140

Patent

active

050974467

ABSTRACT:
A time circuit is provided for a nonvolatile memory device which can electrically be written into. When the write operation on a particular memory cell lasting a relatively long period of time is specified from an external device, the memory device stops the write operation on that memory cell, irrespective of the external write operaiton specification, when the time set on the timer circuit has elapsed. The nonvolatile memory device has memory cells, each consisting of a single transistor. The erase operation on the memory cells is controlled according to a current flowing through these memory cells.

REFERENCES:
patent: 4279024 (1981-07-01), Schrenk
patent: 4908795 (1990-03-01), Tsuchiya et al.

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