Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1997-06-27

1999-03-30

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257317, 36518511, H01L 29788

Patent

active

058893040

ABSTRACT:
Disclosed is the memory cell of an EEPROM having a p-type silicon substrate and a floating gate formed on this silicon substrate via a tunnel oxide film. The element region set in the silicon substrate projects from the surface of a trench-type element isolation region. The projecting element region has a curved portion for increasing the density of tunnel electric current, and is rounded to concentrate the tunnel electric current as far as no breakdown occurs in the tunnel oxide film.

REFERENCES:
patent: 5455790 (1995-10-01), Hart et al.

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