Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1996-10-03

1999-10-05

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257321, H01L 29792

Patent

active

059628910

ABSTRACT:
The semiconductor device having a multilayer gate type transistor constituting memory, comprises a P-type semiconductor substrate, a source formed by diffusing an N-type impurity on a surface of the semiconductor substrate to a first depth, an N-type drain, electrically separated from the source and formed on a surface of the semiconductor substrate, a first insulating film formed on a surface of a channel region between the source and the drain, a first gate electrode formed on a surface of the first insulating film, a second insulating film formed on a surface of the first gate electrode, and a second gate electrode on the second insulating film. The semiconductor device further comprises a source wiring region, which is connected to the source of the multilayer gate transistor and formed by diffusing the N-type impurity in the semiconductor substrate to a second depth shallower than the first depth.

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patent: 5282160 (1994-01-01), Yamagata
patent: 5304829 (1994-04-01), Mori et al.
patent: 5337274 (1994-08-01), Ohji
patent: 5394001 (1995-02-01), Yamaguchi et al.
patent: 5446298 (1995-08-01), Kojima
patent: 5572480 (1996-11-01), Ikeda et al.
patent: 5585656 (1996-12-01), Hsue et al.
Science Forum, "Flash Memory Technical Handbook", Aug. 15, 1993, pp. 55-57, Tokyo, Japan.

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