Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-03-21

1995-05-02

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Erase

36523003, 36518911, G11C 700

Patent

active

054126096

ABSTRACT:
Word lines are divided into a plurality of blocks in a row direction, and divided into a plurality of sections having e.g., four word lines in a column direction. An area where each block and each section are crossed is used as a sector. One sector includes four word lines. A control gate of a plurality of transistors constituting a memory cell is connected to each of the word lines, each drain is connected to each of the bit lines, and each source is connected to each of source lines in common. A source main decoder is provided in each section, source sub-decoders are provided in each sector. Each source sub-decoder includes each of supply circuits. The source main decoder outputs a sector selection signal in accordance with a row address signal, and a block decoder outputs block selection signals in accordance with a column address signal. One supply circuit is selected by the sector selection signal and the block selection signals, and the selected supply circuit supplies the sector selection signal outputted from the source main decoder source lines as an erase signal.

REFERENCES:
patent: 5283758 (1994-02-01), Nakayama

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