Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-11-16
1995-12-19
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, H01L 2978
Patent
active
054770726
ABSTRACT:
An EEPROM cell and a method for fabricating the same are disclosed.
The EEPROM cell fabricated by the method comprises of: a first active region with a second conductive low density impurity formed in a first conductive semiconductor substrate; a second active region with a second conductive high density impurity formed in one side of said first active region; a third active region with the second conductive high density impurity formed in the other side of said first active region; a fourth active region with a first conductive high density impurity formed so as to surround said third active region; a floating gate atop a first insulating layer overlying said first active region; and a control gate atop a second insulating layer overlying said floating gate.
The EEPROM cell is improved in an operational characteristic such as an erasing speed and a programming speed. The EEPROM cell is fabricated in such very small size to be integrated in a high integration degree.
The method for fabricating the EEPROM cell according to the invention is simpler than the conventional ones, whereby the EEPROM cell can be easily fabricated.
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Goldstar Electron Co. Ltd.
Limanek Robert P.
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