Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2009-12-10

2011-10-25

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S189090

Reexamination Certificate

active

08045358

ABSTRACT:
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device including: a memory cell array including: memory cell blocks each having series-connected memory cells; wordlines; and a bitline pair connected to the memory cell blocks, one functioning as a readout bitline, the other one functioning as a reference bitline; an amplification circuit connected to the bitline pair to amplify a signal difference therebetween; and a reference voltage generation circuit including: a dummy memory cell block that has the same configuration as the memory cell block, that has one terminal connected to a first dummy plate line and that has the other terminal connected to the reference bitline; and a paraelectric capacitor that has one terminal connected to a second dummy plate line and that has the other terminal connected to the reference bitline.

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patent: 2007-280458 (2007-10-01), None
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