Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2008-04-24

2011-11-22

Fulk, Steven (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

08063433

ABSTRACT:
A memory cell includes an ONO film composed of a stacked film of a silicon nitride film SIN which is a charge trapping portion and oxide films BOTOX and TOPOX positioned under and over the silicon nitride film, a memory gate electrode MG over the ONO film, a source region MS, and a drain region MD, and program or erase is performed by hot carrier injection in the memory cell. In the memory cell, a total concentration of N—H bonds and Si—H bonds contained in the silicon nitride film SIN is made to be 5×1020cm−3or less.

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