Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2009-09-09

2011-12-27

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S298000, C257S350000, C257S359000, C257S530000

Reexamination Certificate

active

08084830

ABSTRACT:
The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The rectifier element includes a p type first semiconductor region, and a n type second semiconductor region. The first semiconductor region is formed of, at least in part, silicon-germanium mixture (Si1-xGex(0<x<=1)). The second semiconductor region is formed of silicon (Si).

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