Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2009-07-24

2011-10-25

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C365S185050, C365S184000

Reexamination Certificate

active

08044448

ABSTRACT:
A nonvolatile semiconductor memory device includes: a memory cell array region having memory cells connected in series; a control circuit region disposed below the memory cell array region; and an interconnection portion electrically connecting the control circuit region and the memory cell array region. The memory cell array region includes: a plurality of first memory cell regions having the memory cells; and a plurality of connection regions. The interconnection portion is provided in the connection regions. The first memory cell regions are provided at a first pitch in a first direction orthogonal to a lamination direction of the memory cell array region and the control circuit region. The connection regions are provided between the first memory cell regions mutually adjacent in the first direction, and at a second pitch in a second direction orthogonal to the lamination direction and the first direction.

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