Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2010-09-01

2011-12-13

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

08076709

ABSTRACT:
In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.

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Taiwanese Office Action dated Apr. 14, 2011, Application No. TW 093133660.

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