Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-05-15

2009-06-23

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27078, C438S261000

Reexamination Certificate

active

07550801

ABSTRACT:
A nonvolatile semiconductor memory device includes a tunnel insulating film, a floating gate electrode, an inter-electrode insulating film, and a control gate electrode. The tunnel insulating film is formed on a selected part of a surface of a semiconductor substrate. The floating gate electrode is formed on the tunnel insulating film. At least that interface region of the floating gate electrode, which is opposite to the substrate, is made of n-type Si or metal-based conductive material. The inter-electrode insulating film is formed on the floating gate electrode and made of high-permittivity material. The control gate electrode is formed on the inter-electrode insulating film. At least that interface region of the control gate electrode, which is on the side of the inter-electrode insulating film, is made of a p-type semiconductor layer containing at least one of Si and Ge.

REFERENCES:
patent: 6060360 (2000-05-01), Lin et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 58-96589 (1983-06-01), None
patent: 5-206475 (1993-08-01), None
patent: 9-260517 (1997-10-01), None
patent: 10-189921 (1998-07-01), None
patent: 10-256400 (1998-09-01), None
patent: 11-109404 (1999-04-01), None
patent: 2000-150680 (2000-05-01), None
patent: 2003-7861 (2003-01-01), None
patent: 2003-197785 (2003-07-01), None
patent: 2005-26590 (2005-01-01), None
patent: 2005-352209 (2005-12-01), None
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Mar. 10, 2009, for Japanese Patent Application No. 2006-168771, and English-language translation thereof.
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Feb. 3, 2009, for Japanese Patent Application No. 2005-236014, and English-language translation thereof.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4053460