Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-09-08

2008-11-04

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S189110, C365S212000

Reexamination Certificate

active

07447063

ABSTRACT:
The nonvolatile semiconductor memory device according the this invention has a plurality of memory cells arranged in a matrix form and each having a floating gate; at least one first diode connected between drains of said plurality of memory cells and a ground terminal; and at least one second diode connected between sources of said plurality of memory cells and said ground terminal, wherein said first diode and said second diode have a same temperature characteristic. Said first diode and said second diode may be of parasitic diodes, Zener diodes or devices with avalanche breakdown voltages.

REFERENCES:
patent: 7145824 (2006-12-01), Bill et al.
J.D. Bude, et al., “Secondary Electron Flash—a High Performance, Low Power Flash Technology for 0.35 μm and Below”, IEDM '97, 4 pages.
Masataka Kato, et al., “A Shallow-Trench-Isolation Flash Memory Technology with a Source-Bias Programming Method”, IEDM '96, pp. 177-180.

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