Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-10-11

2008-08-19

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S320000

Reexamination Certificate

active

07414285

ABSTRACT:
A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.

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patent: 2006/0141711 (2006-06-01), Dong
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patent: 07-249697 (1995-09-01), None
Aritome, et al., “Reliability Issues of Flash Memory Cells”, Proceedings of the IEEE, vol. 81, No. 5, pp. 776-788, (May 1993).
Choi, et al, “Highly Manufacturable 1 Gb NAND Flash Using 0.12 μm Process Technology”, IEDM Technical Digest, pp. 25-28, (2001).

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