Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-12-29

2008-10-07

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000

Reexamination Certificate

active

07433222

ABSTRACT:
A nonvolatile semiconductor device is configured so that a load circuit applying voltage to a variable resistive element is provided electrically connecting in series to the variable resistive element, a load resistive characteristic of the load circuit can be switched between two different characteristics. The two load resistive characteristics are selectively switched depending on whether a resistive characteristic of the variable resistive element transits from low resistance state to high resistance state, or vice versa, voltage necessary for transition from one of the two resistive characteristics to the other is applied by applying writing voltage to a serial circuit of the variable resistive element and load circuit. After the resistive characteristic of the variable resistive element transits from one to the other, voltage applied to the variable resistive element does not allow a resistive characteristic to return from the other to one depending on the selected load resistive characteristic.

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patent: 2006/137111 (2006-12-01), None
Pagnia et al., “Bistable Switching in Electroformed Metal-Insulator-Metal Devices,” Physica Status Solidi (a), 108, pp. 11-65, 1988.
Zhuang et al., “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),” IEDM Technical Digest, pp. 193-196, Dec. 2000.

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