Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-12-27

2008-10-14

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07436699

ABSTRACT:
Source lines for a spin injection magnetic memory cell are arranged parallel to word lines for executing writing/reading of data multiple bits at a time. In a write operation, a source line potential changes in a predetermined sequence such that the source line commonly connected to a plurality of selected memory cells is set to pass a current only in one direction in each stage of the operation sequence. For the data write sequence, a current is caused to flow through memory cells according to write data sequentially, or the memory cell has a resistance state set to an initial resistance state before writing, and then changed to a state according to the write data Fast writing can be achieved in the magnetic memory without increasing a memory cell layout area.

REFERENCES:
patent: 2006/0126379 (2006-06-01), Hidaka
patent: 2007/0133265 (2007-06-01), Tsuji
patent: 2004-185754 (2004-07-01), None
patent: 2004-185755 (2004-07-01), None
patent: 2004-355670 (2004-12-01), None
patent: 2005-92912 (2005-04-01), None
patent: 2005-216387 (2005-08-01), None

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