Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2008-09-09

2008-09-09

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S063000, C365S189090, C365S230030

Reexamination Certificate

active

11376202

ABSTRACT:
A path routing from a write current source supplying a write current through an internal data line, a bit line and a source line to a reference potential except a memory cell is configured to have a constant resistance independent of a memory cell position selected in a memory array, and each of the resistance value of the current path between the memory cell and the write current source and the resistance value of the current path between the selected memory cell and the reference potential node is set to 500Ω or lower. A nonvolatile semiconductor memory device having improved reliability of data read/write is achieved.

REFERENCES:
patent: 6594176 (2003-07-01), Lammers
patent: 6678189 (2004-01-01), Tran
patent: 7254057 (2007-08-01), Hidaka
patent: 2003-298013 (2003-10-01), None
patent: 2004-186553 (2004-07-01), None

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