Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2007-01-02

2007-01-02

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S411000

Reexamination Certificate

active

10330093

ABSTRACT:
A memory cell of a nonvolatile semiconductor memory device is formed on a silicon layer formed on a silicon substrate through an ONO film. The memory cell has a source region and a drain region formed in the silicon layer, an ONO film and a gate electrode. The ONO film and the ONO film include nitride films having charge trap parts trapping charges.

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