Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-06-06

2006-06-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07057922

ABSTRACT:
The present invention employs a memory cell structure in that one end of a variable resistance element (1) for storing information by change of electric resistance is connected to a source of a selection transistor (2) to form a memory cell (3) and, in a memory cell array (4), a drain of the selection transistor (2) is connected to a common bit line (BL) in a column direction, the other end of the variable resistance element (1) is connected to a source line (SL) and a gate of the selection transistor (2) is connected to a common word line (WL) in a row direction. In the memory cell structure, an operation of resetting data stored in the memory cell (3) is carried out for each of sectors including the plural memory cells (3) commonly connected to the source line (SL).

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Sharp Laboratories. (Jan. 20, 2003).Nikkei Electronics839:98-105.
Zhuang, W.W. et al. (2002). “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),”IEEE,4 pages.

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